The appointed candidate will be responsible for performing epitaxial growth and characterization of semiconducting compounds and heterostructures. The compounds include topological insulators (TI) of the (Bi,Sb)2(Se,Te)3 family of materials and transition metal dichalcogenides (TMDC). S/he will carry out process development, documentation of processes and implement the necessary maintenance of growth-lab and ancillary equipment. S/he will interface with the other PEN members, focused on (electronic) devices that use the grown heterostructures, and with Laboratory Engineers that are in charge of the common facilities at the ICN2. The latter include x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), angle-resolved photoemission spectroscopy (ARPES), and scanning and transmission electron microscopy.